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Ion-Sensitive Field-Effect Transistors (ISFETs) form a wide-spread technologyfor sensing, thanks to their label-free detection and intrinsic CMOScompatibility. Their current sensitivity, {\Delta}ID/ID, for a given{\Delta}pH, however, is limited by the thermionic limit for the SubthresholdSlope (SS) of Metal-Oxide-Semiconductor Field-Effect Transistors(MOSFET) and bythe Nernst limit. Obtaining ISFETs with a steep slope transfer characteristicsis extremely challenging. In this paper we combine the merits of traditionalISFETs with the performance boosts offered by the insertion of a NegativeCapacitor in series with the Gate contact. In the proposed tests with NC PZTcapacitors, we demonstrate experimentally a reduction of the SS by 44%,combined with a current efficiency improvement of more than two times. As aconsequence of the steeper SS, the current sensitivity to pH is improved by78%.

Negative Capacitance Ion-Sensitive Field-Effect Transistors with improved current sensitivity