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In this paper, we develop an explicit model to predict the DC electricalbehavior in ultra-thin surrounding gate junctionless nanowire FET. The proposedmodel takes into account 2D electrical and geometrical confinements of carriercharge density within few discrete sub-bands. Combining a parabolicapproximation of the Poisson equation, first order perturbation theory for theSchrodinger subband energy eigenvalues, and Fermi-Dirac statistics for theconfined carrier density leads to an explicit solution of the DC characteristicin ultra-thin junctionless devices. Validity of the model has been verifiedwith technology computer-aided design simulations. The results confirms itsvalidity for all regions of operation, i.e., from deep depletion toaccumulation and from linear to saturation. This represents an essential steptoward analysis of circuits based on junctionless nanowire devices.

An Explicit Model for Ultra-thin Gate-All-Around Junctionless Nanowire FETs, Including 2D Quantum Confinement