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As personal electronic devices increasingly rely on cloud computing forenergy-intensive calculations, the power consumption associated with theinformation revolution is rapidly becoming an important environmental issue.Several approaches have been proposed to construct electronic devices with lowenergy consumption. Among these, the low-dissipation surface states oftopological insulators (TIs) are widely employed. To develop TI-based devices,a key factor is the maximum temperature at which the Dirac surface statesdominate the transport behavior. Here, we employ Shubnikov-de Haas oscillations(SdH) as a means to study the surface state survival temperature in a highquality vanadium doped Bi1.08Sn0.02Sb0.9Te2S single crystal system. Thetemperature and angle dependence of the SdH show that: 1) crystals withdifferent vanadium (V) doping levels are insulating in the 3-300 K region, 2)the SdH oscillations show two-dimensional behavior, indicating that theoscillations arise from the pure surface states; and 3) at 50 K, the V0.04single crystals (Vx:Bi1.08-xSn0.02Sb0.9Te2S, where x = 0.04) still show clearsign of SdH oscillations, which demonstrate that the surface dominant transportbehavior can survive above 50 K. The robust surface states in our V dopedsingle crystal systems provide an ideal platform to study the Dirac fermionsand their interaction with other materials above 50 K.

Quantum Oscillations of Robust Topological Surface States up to 50 K in Thick Bulk-insulating Topological Insulator