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We report the optical, electrical, and structural properties of Si doped$\beta$-Ga$_2$O$_3$ films grown on (010)-oriented $\beta$-Ga$_2$O$_3$ substratevia HVPE. Our results show that, despite growth rates that are more than oneorder of magnitude faster than MOCVD, films with mobility values of up to 95cm$^2$V$^{-1}$s$^{-1}$ at a carrier concentration of 1.3$\times$10$^{17}$cm$^{-3}$ can be achieved using this technique, with all Si-doped samplesshowing n-type behavior with carrier concentrations in the range of 10$^{17}$to 10$^{19}$ cm$^{-3}$. All samples showed similar room temperaturephotoluminescence, with only the samples with the lowest carrier concentrationshowing the presence of a blue luminescence, and the Raman spectra exhibitingonly phonon modes that belong to $\beta$-Ga$_2$O$_3$, indicating that theGa$_2$O$_3$ films are phase pure and of high crystal quality. We furtherevaluated the epitaxial quality of the films by carrying out grazing incidenceX-ray scattering measurements, which allowed us to discriminate the bulk andfilm contributions. Finally, MOS capacitors were fabricated using ALD HfO$_2$to perform C-V measurements. The carrier concentration and dielectric valuesextracted from the C-V characteristics are in good agreement with Hall probemeasurements. These results indicate that HVPE has a strong potential to yielddevice-quality $\beta$-Ga$_2$O$_3$ films that can be utilized to developvertical devices for high-power electronics applications.

Optical and structural properties of Si doped $\beta$-Ga$_2$O$_3$ (010) thin films homoepitaxially grown by halide vapor phase epitaxy