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Because of relatively low electron mobility of Ga2O3, it is important toidentify proper current spreading materials. Fluorine-doped SnO2 (FTO) offerssuperior properties to those of indium tin oxide (ITO) including higher thermalstability, larger bandgap, and lower cost. However, the Ga2O3/FTOheterojunction including the important band offset and the I-V characteristicshave not been reported. In this work, we have grown the Ga2O3/FTOheterojunction and performed X-ray photoelectron spectroscopy (XPS)measurement. The conduction and valence band offsets were determined to be 0.11and 0.42 eV, indicating a minor barrier for electron transport and type-Icharacteristics. The subsequent I-V measurement of the Ga2O3/FTO heterojunctionexhibited ohmic behavior. The results of this work manifests excellentcandidacy of FTO for current spreading layers of Ga2O3 devices for hightemperature and UV applications.

Determination of band offsets of Ga2O3/FTO heterojunction for current spreading for high temperature and UV applications