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Epitaxial InAs/GaAs Quantum Dots (QDs) are widely used as highly efficientand pure sources of single photons and entangled photon-pairs, however reliablewafer-scale growth techniques have proved elusive. Growth of two-dimensionalQuantum Well (QW) thin-films can be achieved with atomic precision down tobelow the de Broglie wavelength of electrons in the material, exposing thequantum particle-in-a-box energy vs. thickness-squared relationship. However,difficulties in controlling the exact moment of nanostructure nucleationobscure this behaviour in epitaxial QD material, preventing a clearunderstanding of their growth. In this work we demonstrate that QD nucleationcan be induced by directly modulating the crystal surface energy withoutadditional materials or equipment. This gains us quantitative measure of the QDgrowth rate and enables predictive design of QD growth processes. We believethis technique will be crucial to the realisation of uniform arrays of QDsrequired for scalable quantum devices at the single-photon level.

Triggering InAs/GaAs Quantum Dot nucleation and growth rate determination by in-situ modulation of surface energy