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The properties of sputtered and scattered ions are studied for ion beamsputtering of Si by bombardment with noble gas ions. The energy distributionsin dependence on ion beam parameters (ion energy: 0.5 - 1 keV; ion species: Ne,Ar, Xe) and geometrical parameters (ion incidence angle, polar emission angle,scattering angle) are measured by means of energy-selective mass spectrometry.The presence of anisotropic effects due to direct sputtering and scattering isdiscussed and correlated with process parameters. The experimental results arecompared to calculations based on a simple elastic binary collision model andto simulations using the Monte-Carlo code SDTrimSP. The influence of thecontribution of implanted primary ions on energy distributions of sputtered andscattered particles is studied in simulations. It is found that a 10\%variation of the target composition leads to detectable but small differencesin the energy distributions of scattered ions. Comparison with previouslyreported data for other ion/target configurations confirms the presence ofsimilar trends and anisotropic effects: the number of high-energy sputteredions increases with increasing energy of incident ions and decreasingscattering angle. The effect of the ion/target mass ratio is additionallyinvestigated. Small differences are observed with the change of the primary ionspecies: the closer the mass ratio to unity, the higher the average energy ofsputtered ions. The presence of peaks, assigned to different mechanisms ofdirect scattering, strongly depends on the ion/target mass ratio.

Ion beam sputtering of silicon: Energy distributions of sputtered and scattered ions