English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Because of its low-cost, silicon is the standard material for photovoltaicconversion. Yet, its band-edge absorption spectrum is narrower than thespectrum of the solar radiation, which reduces its conversion efficiency. Inthis paper, it is shown that the spectrum of absorbance of silicon can beextended to longer wavelengths by proximity to a two-dimensional (2D)semiconductor. Photo-induced Hall effect, together with standard absorptionspectroscopy, was employed to estimate the increase of efficiency of absorbanceof a 2D-platinum-diselenide/intrinsic-silicon bilayer. The bilayer shows asignificantly higher absorption in the infrared as compared to the singlefilms. Moreover, an overall increase of absorption efficiency by a factortwenty was measured in the entire spectrum of light of a halogen lamp. X-rayPhotoelectron Spectroscopy (XPS) confirms that a reduction of the band-gapoccurs in the silicon substrate at the interface between the twosemiconductors. The results are interpreted in the framework of band-gapnarrowing due to hole-plasma confinement in the Si, induced byelectron-confinement in the 2D film. Possible application of the effect inphoto-voltaic cells is discussed.

Extending the Near-infrared Band-edge Absorption Spectrum of Silicon by Proximity to a 2D Semiconductor