English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Gallium oxide (Ga2O3) is a wide-band-gap semiconductor promising for UVsensors and high power transistor applications, with Baliga's figure of meritthat far exceeds those of GaN and SiC, second only to diamond. Engineering itsband structure through alloying will broaden its range of applications. Usinghybrid density functional calculations we study the effects on adding Bi toGa2O3. While in III-V semiconductors, such as GaAs and InAs, Bi tend tosubstitute on the pnictide site, we find that in Ga2O3, Bi prefers tosubstitute on the Ga site, resulting in dilute (Ga_{1-x}Bi_{x})2O3 alloys withunique electronic structure properties. Adding a few percent of Bi reduces theband gap of Ga2O3 by introducing an intermediate valence band that issignificantly higher in energy than the valence band of the host material. Thisintermediate valence band is composed mainly of Bi 6s and O 2p orbitals, and itis sufficiently high in energy to provide opportunity for p-type doping.

Bismuth-doped Ga2O3 as candidate for p-type transparent conducting material