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Metal-oxide-semiconductor junctions are central to most electronic andoptoelectronic devices. Here, the element-specificity of broadband extremeultraviolet (XUV) ultrafast pulses is used to measure the charge transport andrecombination kinetics in each layer of a Ni-TiO2-Si junction. Afterphotoexcitation of silicon, holes are inferred to transport from Si to Niballistically in ~100 fs, resulting in spectral shifts in the Ni M2,3 XUV edgethat are characteristic of holes and the absence of holes initially in TiO2.Meanwhile, the electrons are observed to remain on Si. After picoseconds, thetransient hole population on Ni is observed to back-diffuse through the TiO2,shifting the Ti spectrum to higher oxidation state, followed by electron-holerecombination at the Si-TiO2 interface and in the Si bulk. Electricalproperties, such as the hole diffusion constant in TiO2 and the initial holemobility in Si, are fit from these transient spectra and match well with valuesreported previously.

Layer-Resolved Ultrafast XUV Measurement of Hole Transport in a Ni-TiO2-Si Photoanode