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Monolayers of semiconducting transition metal dichalcogenides (TMDCs) withunique spin-valley contrasting properties and remarkably strong excitoniceffects continue to be a subject of intense research interests. These model 2Dsemiconductors feature two fundamental intravalley excitons species - opticallyaccessible ' bright' excitons with anti-parallel spins and optically inactive'dark' excitons with parallel spins. For applications exploiting radiativerecombination of bright excitons or long lifetime dark excitons, it isessential to understand the radiative character of the exciton ground state andestablish the energy separation between the lowest energy bright and darkexcitons. Here, we report a direct spectroscopic measure of dark excitons inmonolayer MoSe$_2$ encapsulated in hexagonal boron nitride. By applying strongin-plane magnetic field, we induce mixing and splitting of bright and darkexciton branches, which enables an accurate spectroscopic determination oftheir energies. We confirm the bright character of the exciton ground stateseparated by a 1.5~meV gap from the higher energy dark exciton state, muchsmaller compared to the previous theoretical expectations. These findingsprovide critical information for further improvement of the accuratetheoretical description of TMDCs electronic structure.

Magnetic field mixing and splitting of bright and dark excitons in monolayer MoSe2