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We present a monolithic semiconductor microcavity design for enhancedlight-matter interaction and photon extraction efficiency of an embeddedquantum emitter such as a quantum dot or color center. The microcavity is ahemispherical Fabry-Perot design consisting of a planar back mirror and a topcurved mirror. Higher order modes are suppressed in the structure by reducingthe height of the curved mirror, leading to efficient photon extraction into afundamental mode with a Gaussian far-field radiation pattern. The cavityfinesse can be varied easily by changing the reflectivity of the mirrors and weconsider two specific cases: a low-finesse structure for enhanced broad bandphoton extraction from self-assembled quantum dots and a moderate-finessecavity for enhanced extraction of single photons from the zero-phonon line ofcolor centers in diamond. We also consider the impact of structuralimperfections on the cavity performance. Finally, we present the fabricationand optical characterisation of monolithic GaAs hemispherical microcavities.

Monolithic semiconductor hemispherical micro cavities for efficient single photon extraction