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Electron diffraction through a thin patterned silicon membrane can be used tocreate complex spatial modulations in electron distributions by varying theintensity of different reflections using parameters such as crystallographicorientation and wafer thickness, then selecting specific spots in thediffraction plane using apertures. The patterned electron beams can be used tocontrol phase and amplitude of subsequent x-ray emission, enabling novelcoherent x-ray methods. The electrons themselves can also be used forfemtosecond time resolved diffraction and microscopy. As a first step towardpatterned beams, we demonstrate experimentally and through simulation theability to accurately predict and control diffraction spot intensities. Wesimulate MeV transmission electron diffraction patterns using the multislicemethod for various crystallographic orientations of a single crystal Si(100)membrane near beam normal. The resulting intensity maps of the Braggreflections are compared to experimental results obtained at the AcceleratorStructure Test Area Ultrafast Electron Diffraction (ASTA UED) facility at SLAC.Furthermore, the fraction of inelastic and elastic scattering of the initialcharge is estimated along with the absorption of the membrane to determine thecontrast that would be seen in a patterned version of the Si(100) membrane.

Theoretical and experimental electron diffraction intensity maps for single crystal silicon from an ultrafast source