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High performance thermoelectric materials for wide-range temperatureapplications still remains a challenge. In this study, we have producedhigh-quality homogeneous $In_{0.32}Ga_{0.68}N$ on ZnO substrates, with no phaseseparation at high Indium content, using metal organic chemical vapordeposition for thermoelectric applications. A record high room temperaturefigure of merit zT is obtained of 0.86, which is five times larger than that ofSiGe, the current state of the art high temperature thermoelectric material.These materials are shown to have a nearly perfect doping concentration tomaximize zT regardless of the scattering mechanism. This almost one order ofmagnitude increase in zT is due to large electrical conductivities from oxygenco-doping as well as low thermal conductivities from alloy scattering. Themaximum power factor reached was $77.98x10^{-4} W/mK^{2}$ at 300K for$In_{0.32}Ga_{0.68}N$ alloys at a carrier concentration $~6.25x10^{20}cm^{-3}$. This work indicates that $In_{x}Ga_{1-x}N$ alloys have greatpotential for thermoelectric applications especially at a high temperaturerange.

Homogenous $In_{x}Ga_{1-x}N$ alloys on ZnO substrates: A new approach for high performance thermoelectric materials