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The B2-ordered alloy FeRh shows a metamagnetic phase transition, transformingfrom antiferromagnetic (AF) to ferromagnetic (FM) order at a temperature$T_\mathrm{t} \sim 380 $~K in bulk. As well as temperature, the phasetransition can be triggered by many means such as strain, chemical doping, ormagnetic or electric fields. Its first-order nature means that phasecoexistence is possible. Here we show that a phase boundary in a 300~nmdiameter nanopillar, controlled by a doping gradient during film growth, ismoved by an electrical current in the direction of electron flow. We attributethis to spin injection from one magnetically ordered phase region into theother driving the phase transition in a region just next to the phase boundary.The associated change in resistance of the nanopillar shows memristiveproperties, suggesting potential applications as memory cells or artificialsynapses in neuromorphic computing schemes.

Phase domain boundary motion and memristance in gradient-doped FeRh nanopillars induced by spin injection