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We report on an experimental study of current induced switching inperpendicular magnetic random access memory (MRAM) cells with variableresistance-area products (RAs). Our results show that in addition to spintransfer torque (STT), current induced self-heating and voltage controlledmagnetic anisotropy also contribute to switching and can explain the RAdependencies of switching current density and STT efficiency. Our findingssuggest that thermal optimization of perpendicular MRAM cells can result insignificant reduction of switching currents.

Origin of the resistance-area product dependence of spin transfer torque switching in perpendicular magnetic random access memory cells