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High surface-mobility, which is attributable to topological protection, is atrademark of three-dimensional topological insulators (3DTIs). Exploitingsurface-mobility indicates successful application of topological properties forpractical purposes. However, the detection of the surface-mobility has beenhindered by the inevitable bulk conduction. Even in the case of high-qualitycrystals, the bulk state forms the dominant channel of the electrical current.Therefore, with electrical transport measurement, the surface-mobility can beresolved only below-micrometer-thick crystals. The evaluation of thesurface-mobility becomes more challenging at higher temperatures, where phononscan play a role. Here, using spectroscopic techniques, we successfullyevaluated the surface-mobility of Bi2Te3 (BT) at room temperature (RT). Weacquired the effective masses and mean scattering times for both the surfaceand bulk states using angle-resolved photoemission and terahertz time-domainspectroscopy. We revealed a record-high surface-mobility for BT, exceeding33,000 cm^2/(Vs) per surface sheet, despite intrinsic limitations by thecoexisting bulk state as well as phonons at RT. Our findings partially supportthe interesting conclusion that the topological protection persists at RT. Ourapproach could be applicable to other topological materials possessingmultiband structures near the Fermi level.

Revealing electrically undetectable room temperature surface-mobility of bulky topological insulators by spectroscopic techniques