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Terahertz Raman spectroscopy was performed on high-mobility organicsingle-crystal semiconductors, by which the phonon energy at the Gamma pointwas qualified as a function of external uniaxial strain. The observation ofpeak shifts in Raman modes under uniaxial strain revealed that application ofan external strain can effectively tune the intermolecular vibration thatparticularly correlates electron-phonon coupling. Terahertz Raman spectroscopyconducted in conjunction with molecular dynamics simulation provides anin-depth understanding of the recently discovered very large strain effect oncharge conduction in high-mobility organic semiconductors.

Terahertz Raman spectroscopy probe of intermolecular vibration in high-mobility organic semiconductors under uniaxial strain