English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

The downscaling of silicon-based structures and proto-devices has now reachedthe single atom scale, representing an important milestone for the developmentof a silicon-based quantum computer. One especially notable platform for atomicscale device fabrication is the so-called SiP delta-layer, consisting of anultra dense and sharp layer of dopants within a semiconductor host. Whilstseveral alternatives exist, phosphorus dopants in silicon have drawn the mostinterest, and it is on this platform that many quantum proto-devices have beensuccessfully demonstrated. Motivated by this, both calculations and experimentshave been dedicated to understanding the electronic structure of the SiPdelta-layer platform. In this work, we use high resolution angle-resolvedphotoemission spectroscopy (ARPES) to reveal the structure of the electronicstates which exist because of the high dopant density of the SiP delta-layer.In contrast to published theoretical work, we resolve three distinct bands, themost occupied of which shows a large anisotropy and significant deviation fromsimple parabolic behaviour. We investigate the possible origins of this finestructure, and conclude that it is primarily a consequence of the dielectricconstant being large (ca. double that of bulk Si). Incorporating this factorinto tight binding calculations leads to a major revision of band structure;specifically, the existence of a third band, the separation of the bands, andthe departure from purely parabolic behaviour. This new understanding of thebandstructure has important implications for quantum proto-devices which arebuilt on the SiP delta-layer platform.

The Sub-band Structure of Atomically Sharp Dopant Profiles in Silicon