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The optical and scintillation properties of undoped, Si-doped, and Si, Bco-doped GaAs samples were studied. The light yield specification and X-rayluminescence of GaAs over a wide IR region by using Si and InGaAsphotodetectors are presented. The undoped GaAs demonstrated a narrow emissionband at 838 nm (1.48 eV) and a low light output of about 2 ph/keV. The GaAs:Siis characterized by three broad luminescence bands at 830 nm (1.49 eV), 1070 nm(1.16 eV), 1335 nm (0.93 eV) and a light output of about 71 ph/keV. In the caseof GaAs:(Si, B), four luminescence bands at 860 nm (1.44 eV), 930 nm (1.33 eV),1070 nm (1.16 eV) and 1335 nm (0.93 eV) were observed. A high light yieldhigher than 125 ph/keV was estimated for the co-doped sample. The applicationsof low energy gap semiconductors as cryogenic scintillators for particledetection are discussed. The GaAs is a promising crystal for a cryogenicscintillator for the dark matter (DM) detection.

GaAs as a bright cryogenic scintillator for the direct dark matter detection