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Confinement in two-dimensional transition metal dichalcogenides is anattractive platform for trapping single charge and spins for quantuminformation processing. Here, we present low temperature electron transportthrough etched 50-70nm MoS2 nanoribbons showing current oscillations as afunction of gate voltage. On further investigations current through the deviceforms diamond shaped domains as a function of source-drain and gate voltage. Weassociate these current oscillations and diamond shaped current domains withCoulomb blockade due to single electron tunneling through a quantum dot formedin the MoS2 nanoribbon. From the size of the Coulomb diamond, we estimate thequantum dot size as small as 10-35nm. We discuss the possible origins ofquantum dot in our nanoribbon device and prospects to control or engineer thequantum dot in such etched MoS2 nanoribbons which can be a promising platformfor spin-valley qubits in two-dimensional transition metal dichalcogenides.

Coulomb blockade in Etched Single and Few Layer MoS2 Nanoribbons