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Pattern matching between target electron backscatter patterns (EBSPs) anddynamically simulated EBSPs was used to determine the pattern centre (PC) andcrystal orientation, using a global optimisation algorithm. Systematic analysisof error and precision with this approach was carried out using dynamicallysimulated target EBSPs with known PC positions and orientations. Results showedthat the error in determining the PC and orientation was < 10$^{-5}$ of patternwidth and < 0.01{\deg} respectively for the undistorted full resolution images(956x956 pixels). The introduction of noise, optical distortion and imagebinning was shown to have some influence on the error although better angularresolution was achieved with the pattern matching than using conventional Houghtransform-based analysis. The accuracy of PC determination for the experimentalcase was explored using the High Resolution (HR-) EBSD method but usingdynamically simulated EBSP as the reference pattern. This was demonstratedthrough a sample rotation experiment and strain analysis around an indent ininterstitial free steel.

Pattern Matching Analysis of Electron Backscatter Diffraction Patterns  for Pattern Centre, Crystal Orientation and Absolute Elastic Strain  Determination: Accuracy and Precision Assessment