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This paper depicts the actual variation of gate induced drain leakage currentwith impurity doping concentration by complete qualitative and quantitativeapproach. De Casteljaus algorithm is applied to describe the band to bandtunneling in a thin gate oxide nMOSFET and the results are remarkably matched.Moreover for the very first time, the dependency of the leakage current overimpurity density in the MOSFET drain region is explained in the context of puregeometrical approach. Surprisingly one of the proportionality constant exactlybehaves like impurity gradient which results same characteristics as MOSFETDrain impurity doping profile measured using 2D simulator.

MOSFET GIDL Current Variation with Impurity Doping Concentration A Novel Theoretical Approach