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We report an optically gated transistor composed of CdSe nanocrystals (NCs),sensitized with the dye Zinc beta-tetraaminophthalocyanine for operation in thefirst telecom window. This device shows a high ON/OFF ratio of six orders ofmagnitude in the red spectral region and an unprecedented 4.5 orders ofmagnitude at 847 nm. By transient absorption spectroscopy, we reveal that thisunexpected infrared sensitivity is due to electron transfer from the dye to theCdSe NCs within 5 ps. We show by time-resolved photocurrent measurements thatthis enables fast rise times during near-infrared optical gating of 74 ns.Electronic coupling and accelerated non-radiative recombination of chargecarriers at the interface between the dye and the CdSe NCs are furthercorroborated by steady-state and time-resolved photoluminescence measurements.Field-effect transistor measurements indicate that the increase in photocurrentupon laser illumination is mainly due to the increase in carrier concentrationwhile the mobility remains unchanged. Our results illustrate that organic dyesas ligands for NCs invoke new optoelectronic functionalities, such as fastoptical gating at sub-bandgap optical excitation energies.

A Dye-Sensitized CdSe Nanocrystal Optical Transistor with High ON/OFF Ratio in the First Telecom Window with 74 ns Rise Time