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We present the results of an experimental study of the interaction ofquantized Landau level (LL) edge-states at the physical edge of graphene byusing a graphene pn junction device with a ring-shaped geometry for thechannel. The unique device geometry allows the interactions between edge-statesto be probed at both electrostatic edges defined by pn junctions and at thegraphene physical edge. Measurements show that while the lowest LL edge-stateis decoupled from the other LLs along the electrostatic junction, all theedge-states strongly equilibrate at the graphene physical edge despite therelatively short distance that they travel along the edge in our device. Thesefindings are fundamental for the engineering of future high-performancegraphene field-effect transistors based upon electron optics.

Strong equilibration of Landau levels edge-states at the graphene edge