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The Band to Band tunneling probability strongly depends on the shape of thepotential barrier. However, parabolic approximation of this shape is wellacceptable but unfortunately significant amount of error is unavoidable byusing quadratic polynomial in calculation of tunneling probability. DeCasteljaus algorithm, followed by Bezier Curve can be modeled to any arbitraryshape using its Geometry Invariance Property and End points geometric property.Using this algorithm a new Band-to-Band tunneling model is designed andverified by establishing an analytic expression of Gate Induced Drain Leakagecurrent in MOSFET.

MOSFET GIDL Currentby Designing a New BTBT Model Using De-Casteljaus Algorithm