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Defects play an important role in tailoring the optoelectronic properties ofmaterials. Here we demonstrate that sulphur vacancies are able to engineersub-band photoresponse into the short-wave infrared range due to formation ofin-gap states in Bi2S3 single crystals supported by density functional (DF)calculations. Sulfurization and subsequent refill of the vacancies results infaster response but limits the spectral range to the near infrared asdetermined by the bandgap of Bi2S3. A facile chemical treatment is thenexplored to accelerate the speed of sulphur deficient (SD)-based detectors onthe order of 10 ms without sacrificing its spectral coverage into the infrared,while holding a high D* close to 10^15 Jones in the visible-near infrared rangeand 10^12 Jones at 1.6 um. This work also provides new insights into the rolesulphur vacancies play on the electronic structure and, as a result, intosub-bandgap photoresponse enabling ultrasensitive, fast and broadbandphotodetectors.

Engineering Vacancies in Bi2S3 yields sub-Bandgap Photoresponse and highly sensitive Short-Wave Infrared Photodetectors