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A high photon to electricity conversion efficiency of 47.2082% was achievedby a novel combination of In0.51Ga0.49P, GaAs, In0.24Ga0.76As andIn0.19Ga0.81Sb subcell layers in a quadruple junction solar cell design. Theelectronic bandgap of these materials are 1.9 eV, 1.42 eV, 1.08 eV and 0.55 eVrespectively. This novel III-V arrangement enables the cell to absorb photonsfrom the ultraviolet to deep infrared wavelengths of the solar spectrum. Aftercareful consideration of important semiconductor parameters such as thicknessesof emitter and base layers, doping concentrations, diffusion lengths, minoritycarrier lifetimes and surface recombination velocities an optimized quadruplejunction design has been suggested. Current matching of the subcell layers wasensured to obtain maximum efficiency from the proposed design. Theshort-circuit current density, open circuit voltage and fill factor of thesolar cell are 14.7 mA/cm2, 3.3731 V and 0.9553 respectively. In the designprocess, 1 sun AM1.5 global solar spectrum was considered. The cell performancewas also investigated for extraterrestrial illumination (AM0). A modifieddesign is proposed for space applications. With a short circuit current densityof 18.5 mA/cm2, open circuit voltage of 3.4104 and the fill factor of 0.9557,the power conversion efficiency of the modified quadruple junction design is44.5473% in space.

Novel High Efficiency Quadruple Junction Solar Cell with Current Matching and Optimized Quantum Efficiency