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In this paper, a low profile dynamically tunable microwave absorber isproposed, which consists of high impedance surface (HIS) and graphene sandwichstructure (GSS). We theoretically demonstrate and experimentally verify thatthe proposed absorber can provide a dynamically tunable reflection range fromlarger than -3dB to less than -30 dB (corresponding to the absorption rangefrom 50% to 99.9%) at opera-ting frequency of 11.2GHz by external bias voltage.The entire thickness of this absorber is only 2.8mm, nearly one tenth ofworking wavelength. In addition, a modified equivalent circuit model isproposed to explicate its absorption mechanism. At last, we fabricate aprototype absorber, and measure its absorption in anechoic chamber. Theexperimental results agree well with the full wave simulation results. Thiswork may provide a reference for design and fabrication of dynamically tunablemicrowave absorber based on large-scale graphene and may promote the actualapplications of graphene at microwave frequency.

A Low Profile Tunable Microwave Absorber based on Graphene Sandwich Structure and High Impedance Surface