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Bi-containing III-V semiconductors constitute an exciting class of metastablecompounds with wide-ranging potential optoelectronic and electronicapplications. However, the growth of III-V-Bi alloys requires group-III-richgrowth conditions, which pose severe challenges for planar growth. In thiswork, we exploit the naturally-Ga-rich environment present inside the metallicdroplet of a self-catalyzed GaAs nanowire to synthesize metastableGaAs/GaAs$_{1-\text{x}}$Bi$_{\text{x}}$ axial nanowire heterostructures withhigh Bi contents. The axial GaAs$_{1-\text{x}}$Bi$_{\text{x}}$ segments arerealized with molecular beam epitaxy by first enriching only thevapor-liquid-solid (VLS) Ga droplets with Bi, followed by exposing theresulting Ga-Bi droplets to As$_2$ at temperatures ranging from 270 to380$\,^{\circ}$C to precipitate GaAs$_{1-\text{x}}$Bi$_{\text{x}}$ only underthe nanowire droplets. Microstructural and elemental characterization revealsthe presence of single crystal zincblende GaAs$_{1-\text{x}}$Bi$_{\text{x}}$axial nanowire segments with Bi contents up to (10$\pm$2)$\%$. This workillustrates how the unique local growth environment present during the VLSnanowire growth can be exploited to synthesize heterostructures with metastablecompounds.

Axial GaAs/Ga(As,Bi) Nanowire Heterostructures