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In the last few years, some ideas of electric manipulations in ferromagneticheterostructures have been proposed for developing next generation spintronicdevices. Among them, the magnetization switching driven by spin-orbit torque(SOT) is being intensely pursued. Especially, how to control the switchingcurrent density, which is expected to enrich device functionalities, hasaroused much interest among researchers all over the world. In this paper, anovel method to adjust the switching current is proposed, and the BiFeO3 (BFO)based heterostructures with opposite spontaneous polarizations fields show hugechanges in both perpendicular magnetic anisotropy and the SOT-inducedmagnetization switching. The damping-like torques were estimated by usingharmonic Hall voltage measurement, and the variation of effective spin Hallangles for the heterostructures with opposite polarizations was calculated tobe 272%. At the end of this paper, we have also demonstrated the possibleapplications of our structure in memory and reconfigurable logic devices.

Controlling spin-orbit torque by polarization field in multiferroic BiFeO3 based heterostructures