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We demonstrate that photoemission properties of GaAs photocathodes (PCs) canbe altered by surface acoustic waves (SAWs) generated on the PC surface due todynamical piezoelectric fields of SAWs. Simulations with COMSOL indicate thatelectron effective lifetime in p-doped GaAs may increase by a factor of 10x to20x. It implies a significant, by a factor of 2x to 3x, increase of quantumefficiency (QE) for GaAs PCs. Essential steps in device fabrication aredemonstrated, including deposition of an additional layer of ZnO forpiezoelectric effect enhancement, measurements of I-V characteristic of the SAWdevice, and ability to survive high-temperature annealing.

Enhancement of Photoemission on P-type GaAs using Surface Acoustic Waves