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We report on the synthesis of new nitride-based compound by using annealingof AlN heteroepitaxial layers under a Si-atmosphere at temperatures between1350$^\circ$C and 1550$^\circ$C. The structure and stoichiometry of thiscompound are investigated by high-resolution scanning transmission electronmicroscopy (HRSTEM), energy dispersive X-Ray (EDX) spectroscopy, and densityfunctional theory (DFT) calculations. The identified structure is a derivativeof the parent wurtzite AlN crystal where anion sublattice is fully occupied byN atoms and the cation sublattice is the stacking of 2 different planes along<0001>. The first one exhibits a $\times$3 periodicity along <10-10> with 1/3of the sites being vacant. The rest of the sites in the cation sublattice areoccupied by equal number of Si and Al atoms. Assuming a semiconducting alloy,which is expected to have a wide band gap, a range of stoichiometries isproposed, Al$_{5+\alpha}$Si$_{5+\delta}$N$_{12}$, with $\alpha$ being between 0and 1/3 and $\delta$ between 0 and 1/4.

Al$_{5+\alpha}$Si$_{5+\delta}$N$_{12}$, a new Nitride compound