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Atomically thin two dimensional (2D) materials are promising candidates forminiaturized high-performance optoelectronic devices. Here, we report onmultilayer MoTe2 photodetectors contacted with asymmetric electrodes based onn- and p-type graphene layers. The asymmetry in the graphene contacts creates alarge (Ebi ~100 kV cm-1) built-in electric field across the short (l = 15 nm)MoTe2 channel, causing a high and broad (400 to 1400 nm) photoresponse evenwithout any externally applied voltage. Spatially resolved photovoltage mapsreveal an enhanced photoresponse and larger built-in electric field in regionsof the MoTe2 layer between the two graphene contacts. Furthermore, a fast(~0.01 ms) photoresponse is achieved in both the photovoltaic andphotoconductive operation modes of the junction. Our findings could be extendedto other 2D materials and offer prospects for the implementation of asymmetricgraphene contacts in future low-power optoelectronic applications.

Enhanced photoresponse in MoTe2 photodetectors with asymmetric graphene contacts