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Manipulating and reserving the valley pseudospin of excitons is one core aimin the two-dimensional transition metal dichalcogenides (TMDs). However, due tothe strong electron-hole exchange and spin-orbit coupling interactions, theexciton recombination lifetime is subject to picosecond timescaleintrinsically, and the valley polarization is hardly modulated by a moderatemagnetic field. It is fortunate that interlayer and defect-localized excitonspromise to overcome these difficulties by suppressing the above interactions.Here we clearly reveal that the valley polarization can be reversed and revivedin the defect-localized excitons with a microsecond lifetime in AB-stackedWSe2-WS2 heterobilayer. Specifically, for the interlayer defect-localizedexciton, the valley polarization is reversed and can be efficiently enhanced bya weak out-of-plane magnetic field (<0.4 T). In sharp contrast, the valleypolarization of the intralayer defect-localized exciton can revive after a fastdecay process and follows the direction of the moderate out-of-plane magneticfield (<3 T). We explain the reversed valley polarization with highly magneticsensitivity by the delocalization of defect-localized holes under a weakmagnetic field and the revival of valley polarization by the valley Zeemaneffect under a moderate magnetic field. Our results demonstrate that the valleypseudospin of defect-localized excitons can be efficiently modulated by theexternal magnetic field and enrich both the understanding and the technicalapproaches on manipulating the valley dynamics in TMDs and theirheterostructure.

Magnetically-Sensitive Valley Polarization Reversal and Revival of Defect-Localized Excitons in WSe2-WS2