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Perpendicular exchange bias (EB), which combines the perpendicular magneticanisotropy and the ferromagnetic (FM) - antiferromagnetic (AFM) exchangecoupling, is extremely important in the high-density AFM spintronics. However,the effective modulation of EB remains challenging, since the alternant spinsat the AFM/FM interface are strongly pinned by the AFM layer. Voltage tuning ofEB through the magnetoelectric coupling provides a potential way to achieve arapid magnetization switching in an energy-efficient manner. Nevertheless, theinterfacial strain mediation of perpendicular EB induced by E-field remainsunexplored. In this work, we obtain perpendicular EB nanostructure byroom-temperature fabrication process, and demonstrate the voltage tunableperpendicular EB in Pt/IrMn/(Co/Pt)2/Ta/(011) Pb(Mg1/3Nb2/3)O3-PbTiO3multiferroic heterostructure. To enhance the voltage control effect onperpendicular EB, we further investigate both strain-mediated magnetoelectriccoupling and ionic liquid gating method in the thinned EB system with thestructure of Pt/IrMn/Co/Pt/Ta. As a result, the voltage induced latticedistortion effectively transmits to the AFM/FM interface, while the chargeaccumulation in gating method generates a relatively large hysteresis loopoffset that has not been observed before at room temperature. The voltagemanipulation of perpendicular EB at room temperature provides new possibilitiestowards novel AFM devices and memories with great energy-efficiency andultra-high density.

Voltage Control of Perpendicular Exchange Bias in Multiferroic Heterostructures