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We present the Shannon entropy as an indicator of spatial resolution formorphology of resonance mode pattern in dielectric micro cavity. We obtain twotypes of optimized mesh point for the minimum and maximum sizes, respectively.The critical mesh point for the minimum size is determined by the barelyidentifiable quantum number through chi square test whereas the saturation ofdifference of the Shannon entropy corresponds to the maximum size. We can alsoshow that the critical mesh point increases as the (real) wave number ofeigenvalue trajectory increases and estimate the proportional constant betweenthem. .

Shannon entropy as an indicator of spatial resolution for morphology of mode pattern in dielectric microcavity