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In this letter, we report the operation of AlGaN/GaN HEMTs with Pd gates inair over a wide temperature range from 22$^\circ$C to 500$^\circ$C. Thevariation in the threshold voltage ($V_{th}$) is less than 1$\%$ over theentire temperature range. Moreover, a safe biasing region where thetransconductance peak ($g_m$) occurs over the entire temperature range wasobserved, enabling high-temperature analog circuit design. Furthermore, theoperation of the devices over 25 hours was experimentally studied,demonstrating the stability of the DC characteristics and $V_{th}$ at400$^\circ$C. Finally, the degradation mechanisms of HEMTs at 500$^\circ$C over25 hours of operation are discussed, and are shown to be associated with the2DEG sheet density and mobility decrease.

Stable Operation of AlGaN/GaN HEMTs at 400$^\circ$C in air for 25 hours