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In this article, a novel hot wire oxidation-sublimation deposition (HWOSD)technique was developed to prepare molybdenum oxide (MoOx) thin films with highquality. Silicon heterojunction (SHJ) solar cells with the HWOSD MoOx as a holeselective transport layer (HSL) were fabricated. Thickness of the MoOx layerand annealing process of the solar cells were studied and optimized. A powerconversion efficiency up to 21.10% was achieved on a SHJ solar cell using a14nm MoOx layer as the HSL. Dark current density-voltage-temperature (J-V-T)characteristics of the SHJ solar cell were measured at the temperatures from200K to 380K. Transport processes including thermionic emission of electronsover the potential barrier and quantum assisted tunneling of holes through thegap states in the MoOx layer were proposed for the MoOx/n c-Si heterojunction.The investigation of the transport mechanisms provides us a betterunderstanding of the characteristics of the novel SHJ solar cells and it ishelpful for us to fully demonstrate the potential of such kind of solar cellsin the future.

Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells