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Excitonic stimulated emission provides a promising mechanism and route toachieve low-threshold semiconductor lasers for micro-nano optoelectronicintegrations. However, excitonic stimulated emission from quantumstructure-free semiconductors has rarely been realised at room temperature dueto the phase transition between excitonic and electron-hole plasma states.Herein, we show that through trap-state and band-edge engineering, boundexciton states can be stabilised within the hybrid lead bromide perovskite.Under modest pumping conditions, these states enable stimulated emissionbehaviour that exhibits a low threshold carrier density of only 1.6*1017 cm-3,as well as a high peak gain coefficient of ~1300 cm-1. This is the first timethat bound exciton stimulated emission has been realised at room temperaturefrom a quantum structure-free semiconductor. Not only does this open up newresearch horizons for perovskite materials, but also it has importantimplications for semiconductor excitonic physics and the development ofnext-generation optoelectronic applications.

Low-threshold Stimulated Emission of Hybrid Perovskites at Room Temperature through Defect-Mediated Bound Excitons