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In this work, we show how domain engineered lithium niobate can be used toselectively dope monolayer MoSe2 and WSe2 and demonstrate that theseferroelectric domains can significantly enhance or inhibit photoluminescence(PL) with the most dramatic modulation occurring at the heterojunctioninterface between two domains. A micro-PL and Raman system is used to obtainspatially resolved images of the differently doped transition metaldichalcogenides (TMDs). The domain inverted lithium niobate causes changes inthe TMDs due to electrostatic doping as a result of the remnant polarizationfrom the substrate. Moreover, the differently doped TMDs (n-type MoSe2 andp-type WSe2) exhibit opposite PL modulation. Distinct oppositely chargeddomains were obtained with a 9-fold PL enhancement for the same single MoSe2sheet when adhered to the positive (P+) and negative (P-) domains. This sharpPL modulation on the ferroelectric domain results from different free electronor hole concentrations in the materials conduction band or valence band.Moreover, excitons dissociate rapidly at the interface between the P+ and P-domains due to the built-in electric field. We are able to adjust the charge onthe P+ and P- domains using temperature via the pyroelectric effect and observerapid PL quenching over a narrow temperature range illustrating the observed PLmodulation is electronic in nature. This observation creates an opportunity toharness the direct bandgap TMD 2D materials as an active optical component forthe lithium niobate platform using domain engineering of the lithium niobatesubstrate to create optically active heterostructures that could be used forphotodetectors or even electrically driven optical sources on-chip.

Ferroelectric driven exciton and trion modulation in monolayer MoSe2 and WSe2