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Designing nonvolatile multi-level resistive devices is the necessity of timeto go beyond traditional one-bit storage systems, thus enhancing the storagedensity. Here, we explore the electronic phase competition scenario to designmulti-level resistance states using a half doped CE-type charge orderedinsulating bulk manganite, $Sm_{0.5}Ca_{0.25}Sr_{0.25}MnO_3$ (SCSMO). Byintroducing electronic phase coexistence in a controllable manner in SCSMO, weshow that the system can be stabilized into several metastable states, againstthermal cycling, up to 62 K. As a result the magnetization (and theresistivity) remains unaltered during the thermal cycling. Monte Carlocalculations using two-band double exchange model, including super-exchange,electron-phonon coupling, and quenched disorder, show that the system freezesinto a phase coexistence metastable state during the thermal cycling due to thechemical disorder in SCSMO. Using the obtained insights we outline a pathway byutilizing four reversible metastable resistance states to design a prototypemulti-bit memory device.

Designing multi-level resistance states for multi-bit storage using half doped manganites