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In recent years, considerable efforts have been devoted to developing novelelectron-selective materials for crystalline Si (c-Si) solar cells with theattempts to simplify the fabrication process and improve efficiency. In thisstudy, ZnO:Al (AZO) is co-sputtered with SiO2 to form AZO:SiO2 films withdifferent SiO2 content. These nanometer-scale films, deposited on top of thinintrinsic hydrogenated amorphous silicon films and capped withlow-work-function metal (such as Al and Mg), are demonstrated to functioneffectively as electron-selective contacts in c-Si solar cells. On the onehand, AZO:SiO2 plays an important role in such electron-selective contact andits thickness is a critical parameter, thickness of 2 nm showing the best. Onthe other hand, at the optimal thickness of AZO:SiO2, the open circuit voltage(VOC) of the solar cells is found to be relatively insensitive to either thework function or the band gap of AZO:SiO2. Whereas, regarding the fill factor(FF), AZO without SiO2 content exhibits to be the optimal choice. By usingAZO/Al as electron-selective contact, we successfully realize a 19.5%-efficientsolar cell with VOC over 700 mV and FF around 75%, which is the best resultamong c-Si solar cells using ZnO as electron-selective contact. Also, this workimplies that efficient carrier-selective film can be made by magnetronsputtering method.

Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells