English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

Two-dimensional polyaniline monolayer (C3N) has been recently synthesized asan indirect semiconductor with high electron mobility. In this research, withcombination of density functional theory and Green function formalism, weinvestigate electrical and thermal properties of C3N sheet in details. It isobserved that a tensile strain along zigzag direction can induce a transitionfrom indirect to direct semiconductor, whereas the sheet transits fromsemiconductor to metal under compressive strain. Thermoelectric efficiency ofunstretched C3N sheet is higher in p-doping and its maximum value is obtainedwhen the transport is along zigzag direction. A reduction in figure of merit isfound upon applying strain independent from its direction. To overcome thereduction, we show that when the electrical transport and strain areperpendicular to each other, thermoelectric efficiency of the C3N sheet can besignificantly increased dependent on the kind of strain (tensile orcompression). Results predict the potential application of C3N sheet inthermoelectric and optoelectronic industry by strain engineering.

Tuning thermoelectric efficiency of polyaniline sheet by strain engineering