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The design of efficient graphene-silicon (GSi) Schottky junctionphotodetectors requires detailed understanding of the spatial origin of thephotoresponse. Scanning-photocurrent-microscopy (SPM) studies have been carriedout in the visible wavelengths regions only, in which the response due tosilicon is dominant. Here we present comparative SPM studies in the visible($\lambda$ = 633nm) and infrared ($\lambda$ = 1550nm) wavelength regions for anumber of GSi Schottky junction photodetector architectures, revealing thephotoresponse mechanisms for silicon and graphene dominated responses,respectively, and demonstrating the influence of electrostatics on the deviceperformance. Local electric field enhancement at the graphene edges leads to amore than ten-fold increased photoresponse compared to the bulk of thegraphene-silicon junction. Intentional design and patterning of such grapheneedges is demonstrated as an efficient strategy to increase the overallphotoresponse of the devices. Complementary simulations and modeling illuminateobserved effects and highlight the importance of considering graphene's shapeand pattern and device geometry in the device design.

Visible and infrared photocurrent enhancement in a graphene-silicon Schottky photodetector through surface-states and electric field engineering