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Two-dimensional (2D) semiconductors have been suggested both forultimately-scaled field-effect transistors (FETs) and More-than-Moorenanoelectronics. However, these targets can not be reached without accompanyinggate insulators which are scalable into the nanometer regime. Despite theconsiderable progress in the search for channel materials with high mobilitiesand decent bandgaps, finding high-quality insulators compatible with 2Dtechnologies has remained a challenge. Typically used oxides (e.g. SiO2, Al2O3and HfO2) are amorphous when scaled, while two-dimensional hBN exhibitsexcessive gate leakages. To overcome this bottleneck, we extend the naturalstacking properties of 2D heterostructures to epitaxial fluorite (CaF2), whichforms a quasi van der Waals interface with 2D semiconductors. We reportscalable single-layer MoS2 FETs with a crystalline CaF2 insulator of about 2 nmthickness, which corresponds to an equivalent oxide thickness of less than 1nm. While meeting the stringent requirements of low leakage currents, ourdevices exhibit highly competitive performance and record-small hysteresis. Assuch, our results present a breakthrough for very large scale integrationtowards commercially competitive nano-electronic devices.

Meeting the Scaling Challenge for Post-Silicon Nanoelectronics using CaF2 Insulators