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We propose and analyze the heterostructure comprising ablack-arsenic-phosphorus layer (b-As$_{1-x}$P$_x$L) and a graphene layer (GL)integrated with a light-emitting diode (LED). The integratedb-As$_{1-x}$P$_x$L-GL-LED heterostructure can serve as an active part of theterahertz (THz) laser using the interband radiative transitions in the GL. Thefeasibility of the proposed concept is enabled by the combination of relativelynarrow energy gap in the b-As$_{1-x}$P$_x$L and the proper band alignment withthe GL. The operation of the device in question is associated with thegeneration of the electron-hole pairs by the LED emitted near-infraredradiation in the b-As$_{1-x}$P$_x$L, cooling of the photogenerated electronsand holes in this layer, and their injection into the GL. Since the minimumb-As$_{1-x}$PL energy gap is smaller than the energy of optical phonons in theGL, , the injection into the GL can lead to a relatively weak heating of thetwo-dimensional electron-hole plasma (2D-EHP) in the GL. At the temperaturessomewhat lower than the room temperature, the injection can cool the 2D-EHP.This is beneficial for the interband population inversion in the GL,reinforcement of its negative dynamic conductivity, %in the THz range and therealization of the optical and plasmonic modes lasing supporting the new typesof the THz radiation sources.

Negative terahertz conductivity at vertical carrier injection in a  black-Arsenic-Phosphorus-Graphene heterostructure integrated with a  light-emitting diode