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We present an enhancement of spin properties of the shallow (<5nm) NV centersby using ALD to deposit titanium oxide layer on the diamond surface. With theoxide layer of an appropriate thickness, increases about 2 up to 3.5 times ofboth relaxation time and evolution time were achieved and the shallow NV centercharge states stabilized as well. Moreover, the coherence time kept almostunchanged. This surface coating technique could produce a protective coatinglayer of controllable thickness without any damages to the solid quantum systemsurface, making it possible to prolong T1 time and T2* time, which would be apossible approach to the further packaging technique for the applicating solidquantum devices.

Surface coating with oxide layers to enhance the spin properties of shallow NV centers in diamond