English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Gallium Oxide (Ga2O3) has a huge potential on the power device for its highbreakdown filed and good transport properties. beta-Ga2O3 as the thermodynamicsstable phase, has been demonstrated to form high electron mobility transistor(HEMT) through delta-doping in the barrier due to its none-polar property.Following the development in III-V HEMT which turns from delta-doping-inducedto polarization-induced 2DEG, an alternative method based on III-Nmaterials/beta-Ga2O3 heterostructure is proposed that utilizing thepolarization difference on the interface. Further requirements of electricfield and conduction band difference show that only nitrogen (N)-polar AlN onbeta-Ga2O3 can form the channel and hold large 2DEG concentration on theinterface. Compared with conventional metal-polar AlN/GaN HEMT, the proposedN-polar AlN/beta-Ga2O3 HEMT show a much larger 2DEG concentration, thespontaneous-polarization-dominated electric field, better DC outputperformance, as well as higher breakdown voltage. This study provides a newresearch approach that shifting from delta-doping-induced topolarization-induced on beta-Ga2O3-based HEMT, which can also be a guidelinefor community excavating the application potential of Ga2O3.

AlN/beta-Ga2O3 based HEMT: a potential pathway to ultimate high power device