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The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3(LAO/STO), provides new opportunities for electronics and spintronics. However,due to the presence of multiple orbital populations, tailoring the interfacialproperties such as the ground state and metal-insulator transitions remainschallenging. Here, we report an unforeseen tunability of the phase diagram ofLAO/STO by alloying LAO with a ferromagnetic LaMnO3 insulator without forminglattice disorder and at the same time without changing the polarity of thesystem. By increasing the Mn-doping level, x, of LaAl1-xMnxO3/STO, theinterface undergoes a Lifshitz transition at x = 0.225 across a criticalcarrier density of nc= 2.8E13 cm-2, where a peak TSC =255 mK of superconductingtransition temperature is observed. Moreover, the LaAl1-xMnxO3 turnsferromagnetic at x >=0.25. Remarkably, at x = 0.3, where the metallic interfaceis populated by only dxy electrons and just before it becomes insulating, weachieve reproducibly a same device with both signatures of superconductivityand clear anomalous Hall effect. This provides a unique and effective way totailor oxide interfaces for designing on-demand electronic and spintronicdevices.

Diluted Oxide Interfaces with Tunable Ground States